Improvement of IGBT SPICE Model by Introducing Non-linear Resistance of Near-emitter Semiconducting Layers

Author: Badri Khvitia
Co-authors: A. Gheonjian, Z. Kuchadze, T. Injgia, R. Jobava.
Keywords: IGBT; Power Electronic; Electrical vehicle; EMC simulations
Annotation:

Improvement of generic SPICE model for IGBT is presented. Introduction of non-linear resistance of semiconducting layers located near IGBT emitter allows more exact modeling of different dynamic states of IGBT and still keeps reasonable simulation time. Parameters necessary for model are obtained from data sheets and then are adjusted using results of a single measurement test and multi-parameter fitting algorithm. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs.